PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allowed for sharper doping profiles as well as a wider range of donor concentrations from 4 x 10^16 cm-3 to 2 x 10^19 cm-3 with a maximum Hall mobility of 136 cm2/Vs and a Sn donor level of 77 meV below the conduction band. Expansion of MOCATAXY to (001) β-Ga2O3 also showed improved Hall mobility, growth rates, and smoother films in this orientation.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Akhil Mauze, Takeki Itoh, Yuewei Zhang, James S Speck, "Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy," Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870I (5 March 2021); https://doi.org/10.1117/12.2593236