665-nm-wavelength InGaN-based red LEDs with low forward voltage operation

D. Iida; Z. Zhuang; P. Kirilenko; M. Velazquez-Rizo; M. A. Najmi; K. Ohkawa

doi:10.1117/12.2577029

6 March 2021 665-nm-wavelength InGaN-based red LEDs with low forward voltage operation

D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, M. A. Najmi, K. Ohkawa

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116862F (2021) https://doi.org/10.1117/12.2577029
Event: SPIE OPTO, 2021, Online Only

Conference Poster

Abstract

The LEDs were obtained that the peak emission wavelength and FWHM were 665 nm and 67 nm at 20 mA, respectively. It exhibited a large blueshift of the EL peak wavelength from 691 nm at 5 mA to 631 nm at 100 mA. In this range, the blue-shifted value was 60 nm. Besides, we realized the single peak emission LEDs without an additional emission. We obtained a light output, forward voltage, and EQE of 0.07 mW, 2.45 V, and 0.19% at 20 mA, respectively. The LEDs exhibited the temperature stability of EL intensity and peak wavelength.

Conference Presentation

Citation Download Citation

D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, M. A. Najmi, and K. Ohkawa "665-nm-wavelength InGaN-based red LEDs with low forward voltage operation", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116862F (6 March 2021); https://doi.org/10.1117/12.2577029

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