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22 February 2021 Laser produced plasma EUV sources for N5 HVM and beyond: performance, availability and technology innovation
Peter Mayer, David C. Brandt, Igor Fomenkov, Michael Purvis, Daniel Brown
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Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 1160918 (2021) https://doi.org/10.1117/12.2584407
Event: SPIE Advanced Lithography, 2021, Online Only
Abstract
Multiple ASML NXE:3400C scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of NXE:3400C sources has improved performance and availability by implementing a modular vessel concept and an automated tin supply system. In this paper, we provide an overview of 13.5 nm tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM at the N5 node and beyond. The field performance of sources operating at 250 watts power including the performance of subsystems such as the Collector and the Droplet Generator will be shown. Progress in the development of key technologies for power scaling towards 420W will be described.
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Peter Mayer, David C. Brandt, Igor Fomenkov, Michael Purvis, and Daniel Brown "Laser produced plasma EUV sources for N5 HVM and beyond: performance, availability and technology innovation", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 1160918 (22 February 2021); https://doi.org/10.1117/12.2584407
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KEYWORDS
Scanners
Extreme ultraviolet lithography
Extreme ultraviolet
Tin
High volume manufacturing
Semiconductors
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