Mask contribution to OPC model accuracy

Adam Lyons; Tom Wallow; Christoph Hennerkes; Chris Spence; Maxence Delorme; David Rio; Dai Tsunoda; Yohei Torigoe; Masakazu Hamaji

doi:10.1117/12.2573160

13 October 2020 Mask contribution to OPC model accuracy

Adam Lyons, Tom Wallow, Christoph Hennerkes, Chris Spence, Maxence Delorme, David Rio, Dai Tsunoda, Yohei Torigoe, Masakazu Hamaji

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 115171D (2020) https://doi.org/10.1117/12.2573160
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Conference Poster

Abstract

In this contribution we describe a simulation and experimental study investigating the impact of mask non-ideality and Mask Process Correction (MPC) model choices on Optical Proximity Correction (OPC) model accuracy for an EUV use case. We describe simulation flows and their results for two cases. In the first case we investigate the impact of using an MPC simulated mask contour vs an ideal post-OPC mask. In the second case we investigate the differences between simulations using experimentally measured and simulated mask contours. The wafer data used in this study is an N5 M2 process developed at IMEC with contour-based metrology performed using ASML MXP. NCS NDE-MPC models are created using POR CDSEM CD data and MXP contour data. OPC models are calibrated and evaluated using ASML FEM+ software.

Citation Download Citation

Adam Lyons, Tom Wallow, Christoph Hennerkes, Chris Spence, Maxence Delorme, David Rio, Dai Tsunoda, Yohei Torigoe, and Masakazu Hamaji "Mask contribution to OPC model accuracy", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115171D (13 October 2020); https://doi.org/10.1117/12.2573160

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