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Based on the measured I-V curve of the Ag/n-Si Schottky photodetector, it can be verified that the Ag / n-Si Schottky photodetector can detect the NIR band. The responsivity of the photodetector without or with applied bias can be analyzed by the measured I-V curve. Furthermore, we eventually succeed in applying a pulse signal on the voltage source to resolve the thermal disturbance generated by the external voltage and also optimize the responsivity of the Ag/n-Si Schottky photodetector.
Yu-Chieh Huang andChing-Fuh Lin
"Optimizing performance of silver-plated silicon photodetector in near infrared band with applied bias", Proc. SPIE 11503, Infrared Sensors, Devices, and Applications X, 115030V (22 August 2020); https://doi.org/10.1117/12.2567828
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Yu-Chieh Huang, Ching-Fuh Lin, "Optimizing performance of silver-plated silicon photodetector in near infrared band with applied bias," Proc. SPIE 11503, Infrared Sensors, Devices, and Applications X, 115030V (22 August 2020); https://doi.org/10.1117/12.2567828