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23 August 2020 Non-volatile electrochemical memory operating near the thermal voltage limit
A. Alec Talin
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Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114650V (2020) https://doi.org/10.1117/12.2571004
Event: SPIE Nanoscience + Engineering, 2020, Online Only
Abstract
Neuromorphic computers based on analogue neural networks aim to lower computing power by reducing the need to shuttle data between memory and logic units. Artificial synapses containing nonvolatile analogue conductance states enable direct computation using memory elements; however, most nonvolatile analogue memories require high write voltages and large current densities and are accompanied by nonlinear and unpredictable weight updates. We develop an inorganic redox transistor based on electrochemical lithium-ion insertion into LiXTiO2 that displays linear weight updates at both low current densities and low write voltages. The write voltage, as low as 200 mV at room temperature, is achieved by minimizing the open-circuit voltage and using a low-voltage diffusive memristor selector. We further show that the LiXTiO2 redox transistor can achieve an extremely sharp transistor subthreshold slope of just 40 mV/decade when operating in an electrochemically driven phase transformation.
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A. Alec Talin "Non-volatile electrochemical memory operating near the thermal voltage limit", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650V (23 August 2020); https://doi.org/10.1117/12.2571004
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KEYWORDS
Transistors
Computing systems
Logic
Neural networks
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