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17 April 2020 High quality morphology and high Hall mobility of GePb alloys formed by using implantation and annealing process
Jiayin Yang, Huiyong Hu, Yuanhao Miao
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Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 1145572 (2020) https://doi.org/10.1117/12.2565317
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
The GePb alloys are formed by implanting of Pb into Ge with a Pb dose of 2×1015 cm-2 and 6×1015cm-2 , following with rapid thermal annealing at the temperature of 500°C and 600°C under N2 atmosphere. The root-mean-square roughness of the GePb sample with the implantation dose of 6×1015cm-2 annealed at 600°C is measured to be 1.10 nm characterized by using atomic force microscope in the 5μm×5um scan area, which is the smallest value among reported results. It can be observed from the TEM measurent results that the GePb thickness of the samples with the implantation dose of 2×1015cm-2 and 6×1015cm-2 are approximately 20 nm and 30 nm, respectively. Pb composition of these samples decrease with the increasing of the annealing temperature due to the full precipitation of Pb out of Ge in the film. Temperature-dependent Hall measurement shows that a high Hall mobility of around 230-260 cm2 /Vs has been achieved at the measurement temperature of 80K and this value drops to about 110 cm2 /Vs at 300K. However, these values are both higher than that of traditional Ge sample. These results indicates that GePb alloys is a promising high mobility channel material for the future integrated optoelectronic circuit application.
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Jiayin Yang, Huiyong Hu, and Yuanhao Miao "High quality morphology and high Hall mobility of GePb alloys formed by using implantation and annealing process", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145572 (17 April 2020); https://doi.org/10.1117/12.2565317
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KEYWORDS
Germanium
Annealing
Lead
Raman spectroscopy
Optoelectronics
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