Presentation + Paper
20 March 2020 3D analysis of high-aspect ratio features in 3D-NAND
Jens Timo Neumann, Dmitry Klochkov, Thomas Korb, Sheetal Gupta, Amir Avishai, Ramani Pichumani, Keumsil Lee, Alex Buxbaum, Eugen Foca
Author Affiliations +
Abstract
We demonstrate the application of 3D tomography by FIB-SEM to analyze channel holes in 3D-NAND. We automatically analyze the 3D channel profiles for size, shape, and placement from the reconstructed full 3D volume. As the data contains thousands of holes, and each hole is sampled with a resolution of a few nanometer in 3D, this method provides a vast amount of data. We analyze individual holes as well as a full population of holes, from a solid statistical basis. Such information is beneficial in monitoring and controlling the etch process of the HAR channel holes in 3DNAND fabrication.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Timo Neumann, Dmitry Klochkov, Thomas Korb, Sheetal Gupta, Amir Avishai, Ramani Pichumani, Keumsil Lee, Alex Buxbaum, and Eugen Foca "3D analysis of high-aspect ratio features in 3D-NAND", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113250M (20 March 2020); https://doi.org/10.1117/12.2552006
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Statistical analysis

Scanning electron microscopy

Semiconducting wafers

Logic

Data acquisition

Metrology

Shape analysis

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