Paper
24 February 2020 Realization of GaSb-based DFB lasers and gain chips for the 1.9μm to 3μm spectral regime for molecular spectroscopy
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011C (2020) https://doi.org/10.1117/12.2546472
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
GaSb based types of diode lasers may cover the spectral regime from below 1.8 μm up to 5 μm. For the wavelength regime of 1.8 μm to 2.5 μm InGaAsSb/GaSb MQW material is used. For 2.5 μm to 3.4 μm InAlGaAsSb/GaSb MQW material is used. For above 3μm, an ICL type of design is required. We realized a growth campaign of 10 GaSb based wavers for covering the wavelength regime from 1.9μm to 3μm. We report on the test, performance and applications results in molecular gas sensing of both, gain chips within an external cavity laser as well as on digital DFB lasers.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Honsberg, Tobias Milde, Sebastian Schmidtmann, Christian Assmann, Morten Hoppe, and Joachim Sacher "Realization of GaSb-based DFB lasers and gain chips for the 1.9μm to 3μm spectral regime for molecular spectroscopy", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011C (24 February 2020); https://doi.org/10.1117/12.2546472
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KEYWORDS
Semiconductor lasers

Gallium antimonide

Diodes

Semiconducting wafers

Absorption

Laser damage threshold

Carbon monoxide

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