High speed integrated waveguide lateral Si/Ge/Si photodiodes with optimized transit time

H. Zegmout; B. Szelag; S. Bernabé; L. Virot; P. Grosse; Q. Wilmart; S. Brision

doi:10.1117/12.2545723

26 February 2020 High speed integrated waveguide lateral Si/Ge/Si photodiodes with optimized transit time

H. Zegmout, B. Szelag, S. Bernabé, L. Virot, P. Grosse, Q. Wilmart, S. Brision

Proceedings Volume 11285, Silicon Photonics XV; 1128515 (2020) https://doi.org/10.1117/12.2545723
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

In this paper, we present a statistical characterization results for a high-speed germanium photo-detector structure that calls for no additional process steps than a regular modulator. The photodiodes in question are waveguide PIN SiGeSi photodiodes with targeted bandwidths on the range of 50GHz and a responsivity of more than 0.8A/W at 1310nm. The design logic, mainly intended to reduce the transit time while conserving a high detection area will be explained in details.

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Citation Download Citation

H. Zegmout, B. Szelag, S. Bernabé, L. Virot, P. Grosse, Q. Wilmart, and S. Brision "High speed integrated waveguide lateral Si/Ge/Si photodiodes with optimized transit time", Proc. SPIE 11285, Silicon Photonics XV, 1128515 (26 February 2020); https://doi.org/10.1117/12.2545723

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