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17 September 2019 Evolution of dislocation/stacking fault defects during two-step annealing (Conference Presentation)
Kihyun Kim, Eunhye Kim, Yonghoon Kim, Beomjun Park, Aleksey Bolotnikov, Ralph James
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Proceedings Volume 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI; 1111403 (2019) https://doi.org/10.1117/12.2531675
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States
Abstract
Two-step annealing (i.e. first in Cd vapor and second in Te vapor) is essential process for obtaining high quality CdZnTe (CZT) materials. During the post-growth two-step annealing, main defects in CZT, that is, Te inclusions, were successfully removed while maintaining its resistivities. Additionally, commonly observed nano-scale defects, that is, dislocation and stacking faults in CZT were also disappeared. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra. In this presentation, we will present the evolution of nano-scale defects in annealing process through in-situ transmission electron microscopy (TEM) measurement.
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Kihyun Kim, Eunhye Kim, Yonghoon Kim, Beomjun Park, Aleksey Bolotnikov, and Ralph James "Evolution of dislocation/stacking fault defects during two-step annealing (Conference Presentation)", Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 1111403 (17 September 2019); https://doi.org/10.1117/12.2531675
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KEYWORDS
Annealing
Tellurium
Transmission electron microscopy
Backscatter
Cadmium
Sensors
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