Selective deposition holds promise to simplify next-generation device fabrication and bring down economic cost. In this work, selectively depositing polymers on metal/dielectric patterns was achieved by spin dewetting, a phenomenon that refers to the dewetting of polymers during spin coating. Our strategy utilizes self-assembled monolayers (SAMs) to induce dewetting of polymers over some areas. Line patterns of Cu/SiO2 were investigated. A hydrophobic SAM, octyltrichlorosilane (OTS, Cl3Si–C8H17), was selectively formed on SiO2 in the presence of Cu to render SiO2 non-wettable. During a subsequent spin coating step, polymers dewet from OTS-functionalized SiO2 and coat Cu exclusively. The spin dewetting process is strongly dictated by the spin coating kinetics. A systematic study of the processing conditions revealed strong dependence of polymer film coverage on spin speed, solution concentration, polymer molecular weight, casting solvent, and SAM hydrophobicity.
|