CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10923 > Article
Presentation
4 March 2019 Strain engineering in SiGeSn/GeSn heterostructures for light emitters (Conference Presentation)
Dan Buca, Detlev Gruetzmacher, Moustafa El Kurdi, Daniela Stange, Zoran Ikonic, Nils von den Driesch, Denis Rainko, Hans Sigg, Jean-Michel Hartmann
Author Affiliations +
Proceedings Volume 10923, Silicon Photonics XIV; 109230X (2019) https://doi.org/10.1117/12.2511367
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
GeSn is discussed as solution to realize the dream of a group IV light source integrated on a Si chip. Sn added into a Ge lattice decreases the conduction band energies leading to a direct bandgap semiconductor band structure. However, the compressive strain increases the direct band energy imposing a large Sn content in the GeSn bulk. In spite of many difficulties regarding the growth of epitaxial GeSn alloys on Si, several hundred nm thick GeSn layers with various Sn concentrations up to 15% could be realized and used as gain material for lasers. Nowadays research concentrates on increasing the Sn content towards 20 at% as well as structural layout. The challenge here is the decreasing quality at high Sn contents and the isolation of the active layer from the mists formed at the interface with Ge/Si which increase the laser threshold. In this direction we discuss the influence on lasing and threshold of MQW SiGeSn/GeSn heterostructures with different quantum well thicknesses. Other solution proposed is the change of intrinsic strain type from compressive into tensile by introducing Si3N4 stressors and also GeSn on Insulator technology. These methods are well known in CMOS technology and can be applied to very low Sn content GeSn alloys. The discussion on the best way to reach room temperature laser is addressed both theoretical and experimental.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Dan Buca, Detlev Gruetzmacher, Moustafa El Kurdi, Daniela Stange, Zoran Ikonic, Nils von den Driesch, Denis Rainko, Hans Sigg, and Jean-Michel Hartmann "Strain engineering in SiGeSn/GeSn heterostructures for light emitters (Conference Presentation)", Proc. SPIE 10923, Silicon Photonics XIV, 109230X (4 March 2019); https://doi.org/10.1117/12.2511367
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Tin
Heterojunctions
Silicon
Germanium
Group IV semiconductors
Interfaces
Laser damage threshold
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top