High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

Grigorij Muliuk; Jing Zhang; Jeroen Goyvaerts; Sulakshna Kumari; Brian Corbett; Dries Van Thourhout; Günther Roelkens

doi:10.1117/12.2507373

4 March 2019 High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

Grigorij Muliuk, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, Günther Roelkens

Author Affiliations +

Proceedings Volume 10923, Silicon Photonics XIV; 1092305 (2019) https://doi.org/10.1117/12.2507373
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl₃, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated

Conference Presentation

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Grigorij Muliuk, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, and Günther Roelkens "High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits", Proc. SPIE 10923, Silicon Photonics XIV, 1092305 (4 March 2019); https://doi.org/10.1117/12.2507373

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