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4 March 2019 InAs 1.3μm quantum-dot lasers on germanium (Conference Presentation)
Fuwan Gan, Qian Gong, Jinyi Yan, Chunfang Cao, Xuyi Zhao, Hailong Wang
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Proceedings Volume 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI; 1092214 (2019) https://doi.org/10.1117/12.2512080
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Silicon photonics attracted much attention in past decades, but it is challenging for silicon laser source because of its indirect bandgap. The long-wavelength InAs/GaAs quantum dot (QD) laser monolithically grown on Ge substrate has been reported. Promising performance was reported by solid source molecular beam epitaxy (MBE). In this paper, gas source MBE was tried for the growth of InAs QD lasers on Ge. InAs QD laser is demonstrated in continuous wave mode at room temperature, with wavelengths covering 1.0-1.3 microns. The lowest threshold current density was obtained as 48 A/cm2 with an output power of several tens of mW.
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Fuwan Gan, Qian Gong, Jinyi Yan, Chunfang Cao, Xuyi Zhao, and Hailong Wang "InAs 1.3μm quantum-dot lasers on germanium (Conference Presentation)", Proc. SPIE 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI, 1092214 (4 March 2019); https://doi.org/10.1117/12.2512080
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KEYWORDS
Germanium
Indium arsenide
Quantum dot lasers
Laser sources
Molecular beam epitaxy
Quantum dots
Semiconductor lasers
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