Modeling and Simulation of Multiple Chemical States in Photoresist Materials

Richard A. Ferguson; Chris A. Spence; Yosi Shacham-Diamand; Andrew R. Neureuther

doi:10.1117/12.953038

30 January 1989 Modeling and Simulation of Multiple Chemical States in Photoresist Materials

Richard A. Ferguson, Chris A. Spence, Yosi Shacham-Diamand, Andrew R. Neureuther

Author Affiliations +

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953038
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A general approach to the modeling and simulation of advanced resist systems that rely on transitions between multiple chemical states is presented. The SAMPLE program has been extended to include multiple chemical states that occur during post-exposure baking steps. The bake simulation routine uses reaction kinetics to convert a user specified system of chemical reactions to a system of nonlinear first order differential equations. The system of differential equations is solved numerically for the local concentration of each chemical state throughout the resist as a function of time. The general modeling approach and simulation capability are demonstrated for Shipley XP-8798 chemical amplification resist. The exposure is modeled through resist bleaching measurements. Infrared spectroscopy is used to determine reaction rate coefficients for the acid catalyzed cross-linking reaction that occurs during the post-exposure bake. The development rate is related to the state of the resist following the bake. The models for the exposure, baking and development of the resist are combined to simulate a resist development profile. Experimental results are used in conjunction with simulation to determine the effect of increased sensitivity on resolution.

Citation Download Citation

Richard A. Ferguson, Chris A. Spence, Yosi Shacham-Diamand, and Andrew R. Neureuther "Modeling and Simulation of Multiple Chemical States in Photoresist Materials", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953038

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE