Characterization Of A UV Resist for 248 nm Lithography

Yosi Y. Shacham-Diamand; William N. Partlo; William G. Oldham

doi:10.1117/12.953063

30 January 1989 Characterization Of A UV Resist for 248 nm Lithography

Yosi Y. Shacham-Diamand, William N. Partlo, William G. Oldham

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953063
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A study is presented of the performance of a Novolak-resin naphtoquinone-diazide sensitized resist exposed in the deep-UV. The material under study is PR-1024MB-600, designed for exposure in the UV (280-340 nm) range, including the i-line and h-line as well as deep UV (248 nm). The A, B, C exposure parameters of the photoresist have been measured at 248 nm. Classical bleaching characteristics are observed at low energy; the photoresist transmittance increases with dose. At higher doses the photoresist transmittance decreases, suggesting UV radiation effects on the resin. A model for the behavior and the associated parameter-extraction method for the UV transmittance versus dose in the presence of a variable resin absorbence are proposed. The development characteristics of the photoresist exposed at 248 nm are meas-ured and the results for exposure with less than 5 mJ/cm²/pulse and total dose less than 1 f/cm² show normal positive pho-toresist characteristics. Higher total dose, with low energy per pulse yields a negative tone mode. This tone reversal behavior suggests UV-induced cross-linking. Exposure using high pulse energies (> 25 mlicm² per pulse) also yields a negative tone response. Thermal calculations suggest a heating effect. The image reversal performance of the PR-1024MB resist with addition of low-volatility amines is also demonstrated. Under similar conditions the image reversal process is 10-20 times more sensitive than in positive tone operation. In image reversal the deep-UV photoresist contrast exceeds 2, larger than the value observed in the normal mode.

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Yosi Y. Shacham-Diamand, William N. Partlo, and William G. Oldham "Characterization Of A UV Resist for 248 nm Lithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953063

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KEYWORDS

Photoresist materials

Photoresist developing

Image processing

Absorption

Ultraviolet radiation

Lithography

Optical lithography

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