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6 February 2019 Negative capacitance transistors with sub-kT/q swing
Jing Li, Jiuren Zhou, Genquan Han, Yan Liu, Yue Peng, Jincheng Zhang, Yue Hao
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Proceedings Volume 10842, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Subdiffraction-limited Plasmonic Lithography and Innovative Manufacturing Technology; 1084204 (2019) https://doi.org/10.1117/12.2505014
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
The negative capacitance (NC) Ge pFETs with different thicknesses of HfZrOx (HZO) are investigated. Although NC transistors with 6.6 nm HZO exhibit a 56 mV/decade subthreshold swing, the hysteresis inevitably occurs. The hysteresis-free characteristics are demonstrated in NC Ge pFETs with 4.5 and 3.7 nm HZO. We also study the impact of annealing temperature on the electrical performance of devices, which shows that the hysteresis reduces with the increasing of annealing temperature. By tuning the parameters of HZO, the NC devices achieve better SS and on-current in comparison with the control transistors.
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Jing Li, Jiuren Zhou, Genquan Han, Yan Liu, Yue Peng, Jincheng Zhang, and Yue Hao "Negative capacitance transistors with sub-kT/q swing", Proc. SPIE 10842, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Subdiffraction-limited Plasmonic Lithography and Innovative Manufacturing Technology, 1084204 (6 February 2019); https://doi.org/10.1117/12.2505014
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KEYWORDS
Germanium
Field effect transistors
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