Pattern shift response metrology

Kit Ausschnitt; Vincent Truffert; Koen D'Have; Philippe Leray

doi:10.1117/12.2502353

8 October 2018 Pattern shift response metrology

Kit Ausschnitt, Vincent Truffert, Koen D'Have, Philippe Leray

Proceedings Volume 10810, Photomask Technology 2018; 108100T (2018) https://doi.org/10.1117/12.2502353
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Designed asymmetry amplifies mark centroid sensitivity to variation in pattern dimensions. This enhanced pattern shift response (PSR) enables optical metrology precision to scale inversely with pitch. Embedded bias steps reference the measured PSR variance to design, allowing the PSR to be expressed as an equivalent Design Referenced Deviation (DRD). The shift-to-design correlation slope monitors the evolution of patterning fidelity throughout the process. PSR metrology on ground-rule compatible marks is applied to an example of advanced-node first-metal processing, including EUV lithography, trench etch and CMP.

Conference Presentation

Citation Download Citation

Kit Ausschnitt, Vincent Truffert, Koen D'Have, and Philippe Leray "Pattern shift response metrology", Proc. SPIE 10810, Photomask Technology 2018, 108100T (8 October 2018); https://doi.org/10.1117/12.2502353

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