Stochastic effects in EUV lithography

P. De Bisschop; E. Hendrickx

doi:10.1117/12.2300541

19 March 2018 Stochastic effects in EUV lithography

P. De Bisschop, E. Hendrickx

Author Affiliations +

Proceedings Volume 10583, Extreme Ultraviolet (EUV) Lithography IX; 105831K (2018) https://doi.org/10.1117/12.2300541
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

This paper focusses on stochastic printing failures, such as microbridges in spaces or randomly missing contacts. We quantify such failures with a metric we call NOK (not OK), a metric that essentially represents the failure probability. We measure this NOK-quantity from SEM image analysis, using an in-house software package called Stochalis. We will argue that the most fundamental dependency of this failure probability is its CD dependency: NOK(CD). Using currently available CD-SEM or e-beam inspection tools, it is now possible to measure this NOK(CD) dependency down to the ppm-ppb level. This is not sufficient to prove or disprove yield, but the NOK(CD) function is an excellent tool to compare materials and conditions, i.e. to quantify sensitivities to patterning conditions and show directions for improvement. We will illustrate this with examples on the impact of dose, pitch, resist, etch and illumination mode. We will also show how CD non-uniformities, from very local to global, further affect the local failure probabilities. Finally we will argue that stochastic failure probabilities and CD-non-uniformities together, place practical resolution limits both on CD and on pitch. These limits are not absolute (which is why we call them ‘practical limits’) as they depend on the patterning settings and materials used, but they nevertheless need to be considered very carefully when setting up EUVL processes.

Conference Presentation

Citation Download Citation

P. De Bisschop and E. Hendrickx "Stochastic effects in EUV lithography", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831K (19 March 2018); https://doi.org/10.1117/12.2300541

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE