Paper
19 February 2018 Simplicity VCSELs
Author Affiliations +
Abstract
We reduce the epitaxial design complexity of our conventional single-cavity oxide-aperture vertical-cavity surfaceemitting lasers (VCSELs) to reduce manufacturing costs while still meeting our internal 980 nanometer VCSEL performance goals via simplicity-in-design principles. We achieve maximum static single-mode optical output powers exceeding 4 milliwatts with small-signal modulation bandwidths exceeding 30 gigahertz at an ambient temperature of about 25 degrees Celsius for VCSELs with an oxide-aperture diameter of about 4 micrometers. Neighbor VCSELs with oxide-aperture diameters above 15 micrometers have maximum room temperature multiple-mode optical output powers of about 20 milliwatts with small-signal modulation bandwidths exceeding 20 gigahertz. The performance of our conventional oxide-confined 980 nanometer simplicity VCSELs exceeds the performance of our previously-reported and more complex 980 nanometer VCSEL epitaxial designs where we previously achieved maximum small-signal modulation bandwidths of about 26 gigahertz with oxide-aperture diameters of about 4 to 6 micrometers.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nasibeh Haghighi, Ricardo Rosales, Gunter Larisch, Marcin Gębski, Leszek Frasunkiewicz, Tomasz Czyszanowski, and James A. Lott "Simplicity VCSELs", Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520N (19 February 2018); https://doi.org/10.1117/12.2295028
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KEYWORDS
Vertical cavity surface emitting lasers

Semiconducting wafers

Modulation

External quantum efficiency

Quantum efficiency

Quantum wells

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