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27 January 1998 Status of optoelectronic-VLSI technology based on electroabsorption modulators
Ashok V. Krishnamoorthy, Keith W. Goossen
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Proceedings Volume 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review; 102920D (1998) https://doi.org/10.1117/12.300610
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States
Abstract
We review recent results from the hybrid integration of silicon CMOS VLSI reticles with GaAs/AlGaAs Multiple Quantum Well modulators that have been made in conjunction with multi-project hybrid CMOS/Modulator foundry services.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Ashok V. Krishnamoorthy and Keith W. Goossen "Status of optoelectronic-VLSI technology based on electroabsorption modulators", Proc. SPIE 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review, 102920D (27 January 1998); https://doi.org/10.1117/12.300610
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KEYWORDS
Modulators
Optoelectronics
Quantum wells
Reticles
Silicon
Very large scale integration
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