III-Nitride  advanced technologies and equipment for microelectronics

S. I. Petrov; A. N. Alexeev; V. V. Mamaev; D. M. Krasovitsky; V. P. Chaly

doi:10.1117/12.2267146

30 December 2016 III-Nitride advanced technologies and equipment for microelectronics

S. I. Petrov, A. N. Alexeev, V. V. Mamaev, D. M. Krasovitsky, V. P. Chaly

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241T (2016) https://doi.org/10.1117/12.2267146
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the "Svetlana-Rost" JSC. Basic technological operations are shown: MBE growth of heterostructures, metal deposition of contacts using electron-beam evaporation system, thermal annealing of ohmic contacts, meza-isolation plasma-chemical etching and dielectric plasma deposition. The main problems during the technological route as well as ways to solve are discussed. In particular, ways to reduce the dislocation density in the active region of the transistor heterostructures grown on the mismatched substrates are described in detail. Special attention given to the homogeneity and reproducibility both after some manufacturing operations and applied to the end product.

Citation Download Citation

S. I. Petrov, A. N. Alexeev, V. V. Mamaev, D. M. Krasovitsky, and V. P. Chaly "III-Nitride advanced technologies and equipment for microelectronics ", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241T (30 December 2016); https://doi.org/10.1117/12.2267146

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