Structural investigation of MF, RF and DC sputtered Mo thin films for backside photovoltaic electrode

Anna K. Małek; Konstanty W. Marszałek; Artur M. Rydosz

doi:10.1117/12.2263484

22 December 2016 Structural investigation of MF, RF and DC sputtered Mo thin films for backside photovoltaic electrode

Anna K. Małek, Konstanty W. Marszałek, Artur M. Rydosz

Proceedings Volume 10175, Electron Technology Conference 2016; 1017519 (2016) https://doi.org/10.1117/12.2263484
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

Recently photovoltaics attracts much attention of research and industry. The multidirectional studies are carried out in order to improve solar cells performance, the innovative materials are still searched and existing materials and technology are optimized. In the multilayer structure of CIGS solar cells molybdenum (Mo) layer is used as a back contact. Mo layers meet all requirements for back side electrode: low resistivity, good adhesion to the substrate, high optical reflection in the visible range, columnar structure for Na ions diffusion, formation of an ohmic contact with the ptype CIGS absorber layer, and high stability during the corrosive selenization process. The high adhesion to the substrate and low resistivity in single Mo layer is difficult to be achieved because both properties depend on the deposition parameters, particularly on working gas pressure. Therefore Mo bilayers are applied as a back contact for CIGS solar cells. In this work the Mo layers were deposited by medium frequency sputtering at different process parameters. The effect of substrate temperature within the range of 50°C-200°C and working gas pressure from 0.7 mTorr to 7 mTorr on crystalline structure of Mo layers was studied.

Citation Download Citation

Anna K. Małek, Konstanty W. Marszałek, and Artur M. Rydosz "Structural investigation of MF, RF and DC sputtered Mo thin films for backside photovoltaic electrode", Proc. SPIE 10175, Electron Technology Conference 2016, 1017519 (22 December 2016); https://doi.org/10.1117/12.2263484

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