Lattice Strain Measurements In Silicon Micropositioning Elements By X-Ray Topography

D. Windisch; P. Becker

doi:10.1117/12.949451

11 April 1989 Lattice Strain Measurements In Silicon Micropositioning Elements By X-Ray Topography

D. Windisch, P. Becker

Proceedings Volume 1015, Micromachining Optical Components and Precision Engineering; (1989) https://doi.org/10.1117/12.949451
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

X-ray diffraction methods were developed for the investigation of strain fields in mechanical components of monocrystalline silicon. This local strain fields arise from external forces and from surface defects. Two simple examples of strained silicon are shown in this paper. The average value of the surface region destroyed by slicing with a diamond wheel was 50 μm and by mechanical grinding about 80 μm thick. This destroyed surface region must be removed by an etching procedure, for getting strain free mechanical components.

Citation Download Citation

D. Windisch and P. Becker "Lattice Strain Measurements In Silicon Micropositioning Elements By X-Ray Topography", Proc. SPIE 1015, Micromachining Optical Components and Precision Engineering, (11 April 1989); https://doi.org/10.1117/12.949451

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