Paper
6 December 1988 Field-, Polarity-, And Position-Dependent Photocurrent In Semi-Insulating Single Crystal GaAs
G. C. Vezzoli, Terence Burke, M. Weiner, S. Levy, B. Lalevic
Author Affiliations +
Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988) https://doi.org/10.1117/12.960090
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
Photocurrent studies have been performed on single crystal EL2 compensated semi-insulating GaAs as a function of polarity (using several methods of contact and two crystal orientations) and as a function of position of LED illumination (λ=0.905μ ). The total current (photo + dark) vs time traces for these studies are non linear and reflect three zones of behavior. When the crystal is illuminated near one extremity, the change in polarity causes a non-linear depression in the trace corresponding to positive polarity. In addition, the latter trace consistently shows the presence of small somewhat irregular oscillations of frequency (50MHZ). We interpret the observations to be indicative of: (1) non-uniform longitudinal (110) trap distribution; and (2) non-symmetric potential vs. distance profile suggesting a possible recombination front near the mode.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. C. Vezzoli, Terence Burke, M. Weiner, S. Levy, and B. Lalevic "Field-, Polarity-, And Position-Dependent Photocurrent In Semi-Insulating Single Crystal GaAs", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); https://doi.org/10.1117/12.960090
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KEYWORDS
Crystals

Gallium arsenide

Light emitting diodes

Electrodes

LED lighting

Crystallography

Semiconductors

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