Tolerances For Phase Locking Of Semiconductor Laser Arrays

E M Garmire

doi:10.1117/12.944356

9 August 1988 Tolerances For Phase Locking Of Semiconductor Laser Arrays

E M Garmire

Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944356
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

The fabrication and operating conditions for semiconductor laser arrays to be phase-locked are estimated in an analysis based on the van der Pol theory of the locking of coupled oscillators. Typical numbers for 10 pm spacing show tat the average aluminum concentration in adjacent stripes must be the same to within ≈10^-4, the average epilayer thickness must be the same to within 0.2%, and there is a few percent tolerance on the stripe width and contact resistance. These close tolerances support the fact that high quality fabrication processing is usually required for phase-locked laser arrays, and increases in coupling may be desirable.

Citation Download Citation

E M Garmire "Tolerances For Phase Locking Of Semiconductor Laser Arrays", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944356

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