Modulation Of Absorption By An Electric Field In Type II GaAs/AlAs Superlattices

G Danan; F R Ladan; F Mollot; R Planel

doi:10.1117/12.943401

16 May 1988 Modulation Of Absorption By An Electric Field In Type II GaAs/AlAs Superlattices

G Danan, F R Ladan, F Mollot, R Planel

Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943401
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

In certain cases. GaAs/AlAs superlattices may be type II, electrons being spatially separated from holes. Thus. fundamental optical transitions are weak. Under longitudinal electric field. this separation may be reduced and optical transition probability increased. We report preliminary photoluminescence experiments which evidence this effect. A theoretical description using the envelope function approximation is given.

Citation Download Citation

G Danan, F R Ladan, F Mollot, and R Planel "Modulation Of Absorption By An Electric Field In Type II GaAs/AlAs Superlattices", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943401

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