Plasma CVD: New Ways To Control Thin Film Deposition Processes

W D Partlow

doi:10.1117/12.939535

23 December 1986 Plasma CVD: New Ways To Control Thin Film Deposition Processes

W D Partlow

Proceedings Volume 0678, Optical Thin Films II: New Developments; (1986) https://doi.org/10.1117/12.939535
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

The plasma deposition process can produce coatings with highly desirable properties, attributable to the ion and neutral chemistry at the surface of the growing film. The ultimate technical success of this technique depends upon the ability to control the reactive species in the plasma, their fluxes, and their energies. Recently, progress has been made in identifying deposition mechanisms and understanding how they can be controlled via the available parameters such as plasma excitation power and frequency, reactor geometry, gas pressure, and flow rates. The need to understand and control the mass transport mechanisms at the growing surface has become very clear, and convincing evidence has been demonstrated that back-etching or "surface scrubbing" can be important. This effect can be used to selectively scavenge undesirable phases in the growing film. The influence of these mechanisms on film properties will be discussed. A brief description will also be given of the properties of different types of films available by this process, and a number of examples will be discussed that show how plasmas have been controlled to achieve desired properties for these films.

Citation Download Citation

W D Partlow "Plasma CVD: New Ways To Control Thin Film Deposition Processes", Proc. SPIE 0678, Optical Thin Films II: New Developments, (23 December 1986); https://doi.org/10.1117/12.939535

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