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4 October 2022 Spin-orbit torque switching of ferromagnet from bulk insulating Bi2Se3 in topological insulator/ferromagnet heterostructures (Conference Presentation)
Connie H. Li, Mehmet A. Noyan, Jisoo Moon, Olaf van 't Erve, Enrique D. Cobas, Mark I. Lohmann, Xiaohang Zhang, Berry T. Jonker
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Proceedings Volume PC12205, Spintronics XV; PC1220506 (2022) https://doi.org/10.1117/12.2633169
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States
Abstract
Current-generated spin in topological insulators (TIs) has been shown to efficiently switch FM magnetization via spin-orbit torque (SOT) with much lower critical currently densities. However, TI bulk are often degenerately doped and can shunt current from the surface states. Here we demonstrate SOT switching from bulk-insulating Bi2Se3, obtained by growth on BiInSe/In2Se3 buffer layers by MBE, with significantly reduced critical current density than conventional “bulk-conducting” Bi2Se3. We further grew epitaxial In2Se3 tunnel barriers on Bi2Se3, and demonstrate its spin sensitivity, towards further minimize current shunting through the FM metal and overall power consumption for magnetization switching.
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Connie H. Li, Mehmet A. Noyan, Jisoo Moon, Olaf van 't Erve, Enrique D. Cobas, Mark I. Lohmann, Xiaohang Zhang, and Berry T. Jonker "Spin-orbit torque switching of ferromagnet from bulk insulating Bi2Se3 in topological insulator/ferromagnet heterostructures (Conference Presentation)", Proc. SPIE PC12205, Spintronics XV, PC1220506 (4 October 2022); https://doi.org/10.1117/12.2633169
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KEYWORDS
Switching
Heterojunctions
Dielectrics
Metals
Ferromagnetics
Molecular beam epitaxy
Sapphire
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