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An overview of modeling of reactor and feature scale high aspect ratio (HAR) plasma etching will be provided, with emphasis on challenges raised by the recently released DOE Basic Research Needs (BRN) report "Plasma Science for Microelectronics Nanofabrication" for digital twins and integration with machine learning. Co-design principles will be discussed with examples taken from modeling of ONO-stack and DTI etching, and voltage-waveform-tailoring.
Mark J. Kushner
"Reactor and feature scale modeling for high aspect ratio plasma etching: an update", Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3014937
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Mark J. Kushner, "Reactor and feature scale modeling for high aspect ratio plasma etching: an update," Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3014937