Dr. Tetsuya Takeuchi Profile

Dr. Tetsuya Takeuchi

Engineer at Agilent Technologies Inc

SPIE Involvement:

Author

Publications (2)

Proceedings Article | 12 June 2002 Paper

GaN-based tunnel junction in optical devices

Tetsuya Takeuchi, G. Hasnain, Scott Corzine, Mark Hueschen, Richard Schneider, Christophe Kocot, M. Blomqvist, Ying-Lan Chang, D. Lefforge, Michael Krames, Lou Cook, Steve Stockman, J. Han, M. Diagne, Yi-Fei He, E. Makarona, Arto Nurmikko

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470561

KEYWORDS: Light emitting diodes, Doping, Gallium nitride, Vertical cavity surface emitting lasers, Indium gallium nitride, Quantum wells, Magnesium, Indium nitride, Silicon, Optical components

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Proceedings Article | 17 April 2000 Paper

High-brightness AlGaInN light-emitting diodes

Michael Krames, G. Christenson, Dave Collins, Lou Cook, M. Craford, A. Edwards, Robert Fletcher, Nathan Gardner, Werner Goetz, William Imler, Eric Johnson, R. Scott Kern, Reena Khare, Frederick Kish, Chris Lowery, Mike Ludowise, Richard Mann, M. Maranowski, Steven Maranowski, Paul Martin, J. O'Shea, S. Rudaz, Dan Steigerwald, J. Thompson, Jonathan Wierer, Jingxi Yu, David Basile, Ying-Lan Chang, Ghulam Hasnain, M. Heuschen, Kevin Killeen, Christophe Kocot, Steven Lester, Jeffrey Miller, Gerd Mueller, Regina Mueller-Mach, S. Jeffrey Rosner, Richard Schneider, Tetsuya Takeuchi, Tun Tan

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382822

KEYWORDS: Light emitting diodes, Quantum efficiency, Resistance, Indium gallium aluminium nitride, Light sources and illumination, Reliability, External quantum efficiency, Gallium nitride, Lamps, Sapphire

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