Ferroelectric properties of multi-layer LiTaO3 thin films with Ta2O5 buffer

De-Yin Zhang; Wei-Dong Peng; Jin-Hua Li; Kun Li; Da-Gui Huang

doi:10.1117/12.782838

14 November 2007 Ferroelectric properties of multi-layer LiTaO₃ thin films with Ta₂O₅ buffer

De-Yin Zhang, Wei-Dong Peng, Jin-Hua Li, Kun Li, Da-Gui Huang

Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67220G (2007) https://doi.org/10.1117/12.782838
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

The new sol-gel derived multi-layer LiTaO₃ thin films with Ta₂O₅ buffer layer were prepared on Pt/Ti/SiO2/Si substrate using lithium ethoxide and tantalum ethoxide as starting materials. The sol of Ta₂O₅ was firstly covered on the substrate by spin coating at 6500rpm for 50s and then a rapid annealing at 650°C for 2min to form an about 20nm thick Ta₂O₅ buffer layer. Multi-layer LiTaO₃ thin films were made over Ta₂O₅ buffer by repeated spin coating at 4000rpm for 30s and then a rapid annealing process at 700°C for 3min. The spectrum of XRD show the crystalline orientation of thin film type Ta₂O₅ is different compared to powder type Ta₂O₅. The SEM micrograph of the cross section shows the prepared sample is uniform, smooth and crack-free on the surface and the thickness of LiTaO₃ thin film is 0.341μm. The ferroelectric hysteresis loop and leakage current of the prepared sample have been measured using Al/LiTaO₃/Ta₂O₅/Pt structure electrode by a ferroelectric material analyzer PLC-100. The remanent polarization and coercive field of the prepared sample polarized at 13V were 3.4μC/cm² and 185kV/cm respectively. The leakage current of the prepared sample was 2.66x10^-7A at 71.43kV/cm .Experimental results show the prepared sample of LiTaO₃ thin film with Ta₂O₅ buffer has good ferroelectric properties. Ta₂O₅ buffer introduction between LiTaO₃ thin film and Pt substrate can effectively decrease the leakage current and improve the properties of uncooled LiTaO₃ infrared device.

Citation Download Citation

De-Yin Zhang, Wei-Dong Peng, Jin-Hua Li, Kun Li, and Da-Gui Huang "Ferroelectric properties of multi-layer LiTaO₃ thin films with Ta₂O₅ buffer", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67220G (14 November 2007); https://doi.org/10.1117/12.782838

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