Electrical and optical characterization of PbTiO3/Si heterostructures for applications in optoelectronics

V. Dragoi; Lucian Pintilie; Ioana Pintilie; D. Petre; I. Boerasu; M. Alexe

doi:10.1117/12.312674

2 July 1998 Electrical and optical characterization of PbTiO₃/Si heterostructures for applications in optoelectronics

V. Dragoi, Lucian Pintilie, Ioana Pintilie, D. Petre, I. Boerasu, M. Alexe

Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312674
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania

Abstract

The ferroelectric/semiconductor heterostructures were fabricated by sol-gel deposition of lead titanate (PT) thin films on a single-crystalline p-type Si wafers. The PT films were crystallized by a conventional thermal annealing for 30 min at temperatures ranging from 575 degree(s)C to 675 degree(s)C. Current-voltage and capacitance-voltage characteristics show a hysteresis which can be due to the spontaneous polarization of PbTiO₃. The current-voltage characteristics exhibit a diode behavior while the capacitance-voltage exhibits a large memory window, up to 3.5 V, for the films annealed at 600 - 650 degree(s)C. At the illumination with modulated light, a.c. photovoltage was detected on a broad range of wavelengths (0.35 divided by 4 micrometers ) for all samples. The spectral distribution of the photoelectric signal in the UV-Vis- IR domain shows two local maxima. A model is proposed to explain the observed experimental results.

Citation Download Citation

V. Dragoi, Lucian Pintilie, Ioana Pintilie, D. Petre, I. Boerasu, and M. Alexe "Electrical and optical characterization of PbTiO₃/Si heterostructures for applications in optoelectronics", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312674

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