Paper
21 December 1994 Physics of gain and stimulated emission in II-VI diode lasers
J. Ding, Vladimir G. Kozlov, P. Kelkar, A. Salokatve, Arto V. Nurmikko, Jung Han, Donald C. Grillo, Mike D. Ringle, Robert L. Gunshor
Author Affiliations +
Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197249
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
Spectroscopic work is reviewed which focuses on the microscopic mechanism of gain in ZnSe-based quantum well (QW) lasers, under optical and electrical injection, respectively. Excitonic processes are rather distinct at cryogenic temperatures in the strongly quasi-2 dimensional case of a ZnCdSe QW. More strikingly, recent studies on the room temperature diode lasers show that electron-hole pairwise Coulomb correlations remain relevant in this case as well.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Ding, Vladimir G. Kozlov, P. Kelkar, A. Salokatve, Arto V. Nurmikko, Jung Han, Donald C. Grillo, Mike D. Ringle, and Robert L. Gunshor "Physics of gain and stimulated emission in II-VI diode lasers", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197249
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KEYWORDS
Semiconductor lasers

Excitons

Quantum wells

Absorption

Spectroscopy

Laser damage threshold

Optical pumping

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