Research on electromagnetic effects of MCU under high power microwave stress

Jianke Li; Laiwang Fang; Jianfeng Fan; Yan Gao; Weiheng Shao; Wenxiao Fang

doi:10.1117/12.2623548

27 March 2022 Research on electromagnetic effects of MCU under high power microwave stress

Jianke Li, Laiwang Fang, Jianfeng Fan, Yan Gao, Weiheng Shao, Wenxiao Fang

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 1216932 (2022) https://doi.org/10.1117/12.2623548
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

According to IEC 62132-2, the MCU under test was placed in a 2.4ghz pulse power environment for radiation immunity test, and the interference voltages generated on 13 pins were monitored by rotating at different angles. The measured interference intensity increases with the increase of the interference field intensity, and the maximum field intensity applied in the experiment is 3683.60V/m. The results reveal the pins with the highest and lowest intensity of interference field respectively, which provides a basis for product design.

Citation Download Citation

Jianke Li, Laiwang Fang, Jianfeng Fan, Yan Gao, Weiheng Shao, and Wenxiao Fang "Research on electromagnetic effects of MCU under high power microwave stress", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 1216932 (27 March 2022); https://doi.org/10.1117/12.2623548

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